INFLUENCE OF GRINDING PARAMETERS ON STRENGTH OF REACTION-BONDED SILICON-CARBIDE

Citation
Ka. Kibble et La. Phelps, INFLUENCE OF GRINDING PARAMETERS ON STRENGTH OF REACTION-BONDED SILICON-CARBIDE, British ceramic transactions, 94(5), 1995, pp. 209-216
Citations number
29
Categorie Soggetti
Material Science, Ceramics
ISSN journal
09679782
Volume
94
Issue
5
Year of publication
1995
Pages
209 - 216
Database
ISI
SICI code
0967-9782(1995)94:5<209:IOGPOS>2.0.ZU;2-7
Abstract
The influence of surface grinding on the bend strength of Refel reacti on bonded silicon cal bide has been established. The effect of a chang e in diamond wheel grit size and the intel relation between depth of c ut and the strength has been obtained for the two main grinding direct ions. The strength was higher, varying in the range 434-493 MN m(-2), when the grinding direction was parallel to the flexure tensile axis. with transverse grinding, the mean strength varied from 301 to 359 MN m(-2). Grinding with either 100# (150 mu m average grit size) or 200# (70 mu m average grit) wheels resulted in strengths similar to those o btained with a 400# wheel (40 mu m average grit). In transverse grindi ng the results showed that the grinding force/diamond particle, and th erefore the depth of cut, was of most relevance whereas the size of th e diamond grits was of little significance.