EXCITON LOCALIZATION BY A POTENTIAL WELL FORMED BY A SOLID-SOLUTION IN THE SURFACE REGION OF A SEMICONDUCTOR

Authors
BATYREV AS NOVIKOV BV KARASENKO NV SELKIN AV TENISHEV LN
Citation
As. Batyrev et al., EXCITON LOCALIZATION BY A POTENTIAL WELL FORMED BY A SOLID-SOLUTION IN THE SURFACE REGION OF A SEMICONDUCTOR, JETP letters, 62(5), 1995, pp. 408-413
Citations number
9
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
62
Issue
5
Year of publication
1995
Pages
408 - 413
Database
ISI
SICI code
0021-3640(1995)62:5<408:ELBAPW>2.0.ZU;2-1
Abstract
New striking features were observed in low-temperature (T=2-77 K) opti cal excitonic spectra of CdS crystals. These features are caused by th e trapping of excitons in a potential well formed by the solid solutio n CdS1-xSex(x similar to 0.01) in the surface region of a semiconducto r. (C) 1995 American Institute of Physics.