3-DIMENSIONAL TRANSIENT ELECTROTHERMAL SIMULATION OF ELECTROSTATIC DISCHARGE PROTECTION CIRCUITS

Authors
VOLDMAN SH FURKAY SS SLINKMAN JR
Citation
Sh. Voldman et al., 3-DIMENSIONAL TRANSIENT ELECTROTHERMAL SIMULATION OF ELECTROSTATIC DISCHARGE PROTECTION CIRCUITS, Journal of electrostatics, 36(1), 1995, pp. 55-80
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Journal of electrostatics → ACNP
ISSN journal
03043886
Volume
36
Issue
1
Year of publication
1995
Pages
55 - 80
Database
ISI
SICI code
0304-3886(1995)36:1<55:3TESOE>2.0.ZU;2-V
Abstract
Transient electrothermal simulation of ESD protection circuits using t he 3-D finite element device simulator will be shown to explain the el ectrothermal physics in ESD protection circuits in 0.5 and 0.25 mu m c hannel length CMOS technologies. Simulation, ESD and failure analysis will be compared for evaluation of correlation.