REALIZATION OF 2-DIMENSIONAL GROWTH AND SUPPRESSION OF THREADING DISLOCATION GENERATION IN (INP)(1)(GAAS)(N) QUATERNARY STRAINED SHORT-PERIOD SUPERLATTICES GROWN ON GAAS

Authors
HAYASHIDA K TAKAGI Y SAMONJI K YONEZU H YOKOZEKI M OHSHIMA N PAK K
Citation
K. Hayashida et al., REALIZATION OF 2-DIMENSIONAL GROWTH AND SUPPRESSION OF THREADING DISLOCATION GENERATION IN (INP)(1)(GAAS)(N) QUATERNARY STRAINED SHORT-PERIOD SUPERLATTICES GROWN ON GAAS, JPN J A P 2, 34(11A), 1995, pp. 1442-1444
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Issue
11A
Year of publication
1995
Pages
1442 - 1444
Database
ISI
SICI code
Abstract
We investigated the growth mode and the dislocation generation process in the growth of (InP)(1)(GaAs)(n) quaternary strained short-period s uperlattice (SSPS) on GaAs(100) by reflection high-energy electron dif fraction (RHEED) and transmission electron microscopy (TEM). The (InP) (1)(GaAs)(n) SSPSs with n of 2 and 3 were two-dimensionally grown even after the lattice relaxation. The generation of threading dislocation s was suppressed by introducing the [011] misfit dislocations at the h etero-interface.