SURFACE ALTERATION OF AMORPHOUS SI3N4 FILMS BY ARF EXCIMER-LASER IRRADIATION

ArF excimer laser induces silicon precipitation accompanied by nitroge n desorption on the surface of an amorphorus Si3N4 film, when the lase r fluence exceeds the critical fluence which is about 0.2 J/cm(2). The amount of nitrogen desorption and the silicon precipitation of the am orphous Si3N4 film increases with increasing laser fluence. The depth of the silicon precipitation on the amorphous Si3N4 film increases exp onentially with increasing laser fluence.