CATALYTIC AND PHOTOINDUCED EFFECTS OF TI AND TIO2 LAYERS ON AL FILM GROWTH BY CHEMICAL-VAPOR-DEPOSITION

In chemical vapor deposition using dimethylaluminum hydride, Al thin f ilms could be grown even at a substrate temperature of 60 degrees C on catalytic Ti layers at a rate of 0.5 nm/min without UV irradiation. S canning tunneling microscopy revealed a dense formation of Al islands on the Ti surface at the initial stage of Al deposition. In contrast, the catalytic reaction induced by TiO2 layers was weak, and the Al fil ms were deposited at 120 degrees C only in the presence of UV light ge nerated by a deuterium lamp.