MECHANISMS FOR THE EFFECT OF ARGON ON THE RATE OF PLASMA CHEMICAL ETCHING OF METALS AND SEMICONDUCTORS IN CHLORINE PLASMAS

Authors
EFREMOV AM KUPRIYANOVSKAYA AP SVETTSOV VI
Citation
Am. Efremov et al., MECHANISMS FOR THE EFFECT OF ARGON ON THE RATE OF PLASMA CHEMICAL ETCHING OF METALS AND SEMICONDUCTORS IN CHLORINE PLASMAS, High energy chemistry, 27(1), 1993, pp. 83-86
Citations number
21
Categorie Soggetti
Chemistry Physical
Journal title
High energy chemistry → ACNP
ISSN journal
00181439
Volume
27
Issue
1
Year of publication
1993
Pages
83 - 86
Database
ISI
SICI code
0018-1439(1993)27:1<83:MFTEOA>2.0.ZU;2-I
Abstract
Possible mechanisms for the influence of argon on the rate of plasma c hemical etching of materials in chlorine plasma are analyzed. The para meters of a three-component Cl2-Cl-Ar mixture are calculated by numeri cally solving the Boltzmann equation. It is shown that reactions invol ving metastable argon atoms cannot explain the experimentally observed increase in the density of chlorine atoms and in the etching rate for Ar-Cl2 mixtures with a large inert gas content.