ELECTRONIC AND ATOMIC-STRUCTURE OF METASTABLE PHASES OF BORON-NITRIDEUSING CORE-LEVEL PHOTOABSORPTION

Citation
A. Chaiken et al., ELECTRONIC AND ATOMIC-STRUCTURE OF METASTABLE PHASES OF BORON-NITRIDEUSING CORE-LEVEL PHOTOABSORPTION, Applied physics letters, 63(15), 1993, pp. 2112-2114
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
15
Year of publication
1993
Pages
2112 - 2114
Database
ISI
SICI code
0003-6951(1993)63:15<2112:EAAOMP>2.0.ZU;2-Q
Abstract
Soft x-ray core-level photoabsorption has been measured from three for ms of boron nitride, namely the hexagonal (hBN), cubic (cBN), and inco herent (iBN) phases. The B 1s and N 1s photoabsorption spectra of the hBN sample show evidence of both sigma- and pi*-empty states, indicat ive of sp2 bonding, while the cBN absorption spectra exhibits only sp3 bonding in absorption features characteristic of the zincblende struc ture. The incoherent phase of BN in the form of a thin film on a Si su bstrate possesses sigma and pi* states similar to hBN. The B 1s pi* a bsorption features of the iBN film show an angular dependence which su ggests that the microstructure consists of hexagonal-phase layer plane s oriented normal to the BN/Si interface.