10 GHZ BANDWIDTH MONOLITHIC P-I-N MODULATION-DOPED FIELD-EFFECT TRANSISTOR PHOTORECEIVER

Authors
DUTTA NK LOPATA J BERGER PR WANG SJ SMITH PR SIVCO DL CHO AY
Citation
Nk. Dutta et al., 10 GHZ BANDWIDTH MONOLITHIC P-I-N MODULATION-DOPED FIELD-EFFECT TRANSISTOR PHOTORECEIVER, Applied physics letters, 63(15), 1993, pp. 2115-2116
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
15
Year of publication
1993
Pages
2115 - 2116
Database
ISI
SICI code
0003-6951(1993)63:15<2115:1GBMPM>2.0.ZU;2-T
Abstract
A photoreceiver circuit using an InGaAs p-i-n photodiode and InGaAs/In AlAs pseudomorphic modulation-doped field effect transistor (MODFET) b ased preamplifier has been fabricated. The 18 mum diam photodiode has a bandwidth of 29 GHz and the f(t) and f(max) of the MODFET are 26 and 30 GHz, respectively. The photoreceiver circuits have bandwidths of 1 0 GHz and 17 dB gain. The sensitivity at 2.5 Gb/s is -26.4 dBm.