DEPTH PROFILES OF STRAIN IN IN0.10GA0.90AS GAAS MULTIQUANTUM-WELL STRUCTURES OBTAINED BY VARIABLE-PUMP WAVELENGTH PHOTOLUMINESCENCE/

Authors
GRIFFITHS CO COOPER SL KLEIN MV FORBES DV COLEMAN JJ
Citation
Co. Griffiths et al., DEPTH PROFILES OF STRAIN IN IN0.10GA0.90AS GAAS MULTIQUANTUM-WELL STRUCTURES OBTAINED BY VARIABLE-PUMP WAVELENGTH PHOTOLUMINESCENCE/, Applied physics letters, 63(15), 1993, pp. 2123-2125
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
15
Year of publication
1993
Pages
2123 - 2125
Database
ISI
SICI code
0003-6951(1993)63:15<2123:DPOSII>2.0.ZU;2-E
Abstract
We have performed photoluminescence measurements probing the strain in a set of In0.10Ga0.90As/GaAs multiquantum well (MQW) samples. By usin g different continuous wave pump laser wavelengths we obtain a depth p rofile of strain in individual quantum wells within the MQW structure. We also present evidence for the existence of an equilibrium strain b etween In0.10Ga0.90As quantum well layers and GaAs barrier layers for thick strain-relaxed MQW structures.