CONFIGURATION AND CRYSTALLIZATION OF A-C-H FILM ON GE AND SI SUBSTRATES

Infrared and Raman analyses on the configuration of hydrogenated amorp hous carbon (a-C:H) thin films on monocrystalline Ge and Si substrates have been carried out. Models of the short range order and of the non -equilibrium crystallization aggregation of the films are proposed bas ed on the analysis results and previous works by Smith [1, 2], Lu and Wang [3] and Witten and Sander [4]. The computer simulated aggregates, according to the models, are fractals with the dimension 1.81 +/- 0.0 6. The films have been crystallized by laser illustration quenching. T he fractal dimension of the experimentally obtained aggregates is in a greement with the simulation result.