The development of low damage anisotropic etching is important for the
fabrication of mercury cadmium telluride (Hg1-xCdxTe) based IR device
s. Typical methane-hydrogen chemistries have been shown to etch Hg1-xC
dxTe causing changes in the surface composition and roughness. To inve
stigate these changes, Hg1-xCdxTe samples with (111) A and (111) B ori
entations were systematically etched in hydrogen and methane mixtures,
with 0%, 5%, 10%, and 20% methane in hydrogen using an electron cyclo
tron resonance plasma etching tool. Results were compared with reactiv
e ion etched samples. Ellipsometry, atomic force microscopy (AFM) and
scatterometry show that as etching proceeds there is considerable surf
ace roughening. Quantitative measurements of roughness as measured by
the three techniques reveal that etching causes vertical roughening be
tween 2 nm and 20 nm. AFM measurements correlated well with scatterome
try measurements. Ellipsometry measurements only weakly correlated wit
h the other techniques owing to the sensitivity of ellipsometry to rou
ghness features less than the wavelength of light as analyzed using ef
fective medium theory. Ellipsometry results show that etching changes
the surface alloy composition as well as roughness, and in several cas
es resulted in apparent vertical grading of composition. The addition
of a few per cent methane in hydrogen reduced surface roughness.