IN-SITU DUAL-WAVELENGTH AND EX-SITU SPECTROSCOPIC ELLIPSOMETRY STUDIES OF STRAINED SIGE EPITAXIAL LAYERS AND MULTIQUANTUM-WELL STRUCTURES

In-situ dual-wavelength ellipsometry and ex-situ spectroscopic ellipso metry have been used to study strained Si1-xGex/Si multilayers. Refere nce dielectric function spectra of strained Si1-xGex with 0.06<x<0.29 have been obtained for the first time and an interpolation procedure b ased on the strain dependence of the dominant critical point energies developed. Good agreement with composition and thickness values from c orroborative techniques was obtained when the effects of strain were t aken into account.