SPECTROSCOPIC ELLIPSOMETRY - A USEFUL TOOL TO DETERMINE THE REFRACTIVE-INDEXES AND INTERFACES OF IN0.52AL0.48AS AND IN0.53ALXGA0.47-XAS ON INP IN THE WAVELENGTH RANGE FROM 280 TO 1900 NM

Authors
DINGES HW BURKHARD H LOSCH R NICKEL H SCHLAPP W
Citation
Hw. Dinges et al., SPECTROSCOPIC ELLIPSOMETRY - A USEFUL TOOL TO DETERMINE THE REFRACTIVE-INDEXES AND INTERFACES OF IN0.52AL0.48AS AND IN0.53ALXGA0.47-XAS ON INP IN THE WAVELENGTH RANGE FROM 280 TO 1900 NM, Thin solid films, 233(1-2), 1993, pp. 145-147
Citations number
10
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
233
Issue
1-2
Year of publication
1993
Pages
145 - 147
Database
ISI
SICI code
0040-6090(1993)233:1-2<145:SE-AUT>2.0.ZU;2-9
Abstract
The refractive indices of layers of the quaternary materials In0.53Al0 .21Ga0.26As and In0.53Al0.31Ga0.16As on InP are measured for the first time by spectroscopic ellipsometry in the wavelength range from 280 t o 1900 nm. In previous papers we found out that between InP and molecu lar beam epitaxy (MBE) grown In0.52Al0.48As, In0.53Al0.405-Ga0.065As, In0.53Al0.11Ga0.36As, and In0.53Ga0.47As layers an interface layer exi sts, owing to the exchange of phosphorus and arsenic atoms during the AS4-stabilized oxide desorption procedure before the MBE growth. We in vestigated two layers (with different thicknesses) of each composition for the determination of the refractive indices and the exact values of the thicknesses.