SPECTROSCOPIC ELLIPSOMETRY OF STRAINED SI1-XGEX LAYERS

Spectroscopic ellipsometry was used for the determination of optical p arameters and thicknesses of Si-capped Si1-xGex layers with x = 0. 10, 0. 16 and 0.20, grown by ultrahigh vacuum chemical vapour deposition. The parameters of the E1 critical point were determined together with the thicknesses of the surface natural oxide, the Si cap and the Si1- xGex layers. The results were correlated with cross-section transmissi on electron microscopy, X-ray diffraction and reflectance measurements and compared with available data from literature.