NONDESTRUCTIVE CHARACTERIZATION OF III-V ALLOY MULTILAYER STRUCTURES USING SPECTROSCOPIC ELLIPSOMETRY

Authors
PICKERING C CARLINE RT GARAWAL NS STEHLE JL PIEL JP BLUNT R KIRBY P
Citation
C. Pickering et al., NONDESTRUCTIVE CHARACTERIZATION OF III-V ALLOY MULTILAYER STRUCTURES USING SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 233(1-2), 1993, pp. 171-175
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
233
Issue
1-2
Year of publication
1993
Pages
171 - 175
Database
ISI
SICI code
0040-6090(1993)233:1-2<171:NCOIAM>2.0.ZU;2-7
Abstract
Reference dielectric function spectra have been obtained for Al0.48In0 .52As, In0.53Ga0.47As and strained InxGa1-xAs (x = 0. 1, 0.2). Spectro scopic ellipsometry (SE) data of three- and four-layer lattice-matched and pseudomorphic structures incorporating these materials and InP, G aAs and Al0.2Ga0.8As have been characterized, layer thicknesses in exc ellent agreement with direct techniques being obtained. Doublets due t o transitions in single In0.1Ga0.9As quantum wells have been observed by SE and photoreflectance.