S. Zollner et al., TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION AND THE INTERBAND CRITICAL-POINT PARAMETERS OF GAP, Thin solid films, 233(1-2), 1993, pp. 185-188
We have used a rotating analyser type of spectroscopic ellipsometer to
measure the dielectric function epsilon(omega) of GaP from 10 to 640
K in the 1. 6 - 5.6 eV photon energy region. By performing a line shap
e analysis of the observed structures in d2epsilon/domega2 with the As
pnes equation, the interband critical-point (CP) parameters (strength,
threshold energy, broadening, and excitonic phase angle) and their te
mperature dependence have been determined. Special emphasis is put on
the E0', E0'+DELTA0', and E2 CPs. We determine the spin-orbit splittin
g DELTA0' of GAMMA15c to be 160 +/- 10 meV. The observed decrease in e
nergy of the CPs (after correction for the effect of thermal expansion
) and the corresponding increase in broadening with increasing tempera
ture agree reasonably well with results of a calculation which takes i
nto account the Debye-Waller and self-energy terms of the deformation
potential type electron-phonon interaction. These calculations are bas
ed on an empirical pseudopotential band structure and a phonon shell m
odel fitted to neutron scattering data and evaluate the strength of th
e deformation potential interaction using perturbation theory (rigid p
seudoion method).