NONDESTRUCTIVE DEPTH PROFILING OF SILICON ION-IMPLANTATION INDUCED DAMAGE IN SILICON (100) SUBSTRATES

In this study, the ion implantation of silicon (100) substrates with S i-28+ ions is characterised using spectroscopic ellipsometry (SE), mod ulated optical reflectance (MOR) and Rutherford backscattering spectro scopy (RBS). Samples were implanted with ion energies of 2 MeV, 1 MeV and 200 keV to create a series of deep-level and surface-damaged layer s. The implantation dose was varied from 3.4 X 10(14) ions CM-2 to 1.5 x 10(16) ions CM-2. All ion implantations were performed at room temp erature. It was observed that the amplitudes and positions of the E1 a nd E2 silicon peaks are sensitive indicators of the degree of crystall inity of the silicon substrate. Monitoring of these parameters may pro vide a rapid route for wafer mapping of ion-implantation uniformity. T he SE oscillations observed below 2.3 eV reflect the depth of the ion- implanted damage layer. In addition, analysis of the complete spectros copic data yields damage profiles consistent with both measured and ca lculated RBS and TRIM ion-implantation moments.