INVESTIGATION OF THE SYSTEM INSB-SIO2 BY SPECTROSCOPIC MULTIANGLE ELLIPSOMETRY

We have characterized by multiangle spectroscopic ellipsometry the int erface structure of silicon oxide plasma deposited on [111] p-type InS b substrates. Measurements have been performed with a step of 10 nm in the 400-800 nm spectral range for different angles of incidence betwe en 40-degrees and 80-degrees with a 5-degrees step. This large set of experimental data is used for solving the inverse ellipsometric proble m with different structure models. Minimization procedures and merit f unction have been discussed. The layered structure from the best-fit m odel fits well the elemental distribution obtained from Auger analysis . The comparison of the dispersion of the optical constants of bulk In Sb obtained on the basis of this model with the available literature d ata also reveals good agreement.