ELLIPSOMETRY STUDY OF NONUNIFORM LATERAL GROWTH OF ZNO THIN-FILMS

Citation
S. Pittal et al., ELLIPSOMETRY STUDY OF NONUNIFORM LATERAL GROWTH OF ZNO THIN-FILMS, Thin solid films, 233(1-2), 1993, pp. 286-288
Citations number
9
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
233
Issue
1-2
Year of publication
1993
Pages
286 - 288
Database
ISI
SICI code
0040-6090(1993)233:1-2<286:ESONLG>2.0.ZU;2-P
Abstract
Ellipsometry is normally used to characterize layered structures which have uniform properties laterally across the area of the probe beam. Ex situ ellipsometry was used to study the lateral variation in film t hickness introduced purposely in ZnO films grown by magnetron sputteri ng.