INTEGRATED COMPLEMENTARY HBT MICROWAVE PUSH-PULL AND DARLINGTON AMPLIFIERS WITH P-N-P ACTIVE LOADS

Authors
KOBAYASHI KW UMEMOTO DK VELEBIR JR OKI AK STREIT DC
Citation
Kw. Kobayashi et al., INTEGRATED COMPLEMENTARY HBT MICROWAVE PUSH-PULL AND DARLINGTON AMPLIFIERS WITH P-N-P ACTIVE LOADS, IEEE journal of solid-state circuits, 28(10), 1993, pp. 1011-1017
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE journal of solid-state circuits → ACNP
ISSN journal
00189200
Volume
28
Issue
10
Year of publication
1993
Pages
1011 - 1017
Database
ISI
SICI code
0018-9200(1993)28:10<1011:ICHMPA>2.0.ZU;2-8
Abstract
We report the first microwave results of complementary heterojunction bipolar transistor (HBT) amplifiers which integrate both n-p-n and p-n -p devices on the same chip using selective molecular beam epitaxy (MB E). An HBT wideband amplifier utilizing the Darlington configuration a nd implementing a p-n-p active load has a gain of 7.5 dB and a bandwid th from dc to 2.5 GHz. A complementary push-pull amplifier has a satur ated output power of 7.5 dBm at 2.5 GHz.