BETA-FESI2 IN (111)SI AND IN (001)SI FORMED BY ION-BEAM SYNTHESIS

Ion-beam synthesis of beta-FeSi2 is demonstrated both in (111) Si and (001) Si substrates by 450 keV Fe ion implantation at elevated tempera tures using a dose of 6 x 10(17) Fe/cm2 and subsequent annealing at 90 0-degrees-C. The structure of the buried layers has been analyzed usin g Rutherford backscattering spectrometry, x-ray diffraction, and (cros s-section) transmission electron microscopy. In (111) Si an epitaxial layer is formed consisting of grains with lateral dimensions of approx imately 5 mum. Epitaxy of beta-FeSi2 (110) and/or (101) planes paralle l to the (111) Si substrate plane is observed. In (001) Si a layer is formed consisting of grains with lateral dimensions of typically 0.5 m um. Several grain orientations have been observed in this material, am ong others beta-FeSi2 {320}, {103}, and {13,7,0} parallel to (001) Si. Selected (111) Si samples were investigated optically using spectrosc opic ellipsometry, and near-infrared transmittance and reflectance spe ctroscopy. The results confirm that the beta-FeSi2 layer has an optica l band gap of 0.87 eV. The ellipsometry results indicate that the laye rs formed by ion-beam synthesis are more dense than those formed by su rface growth techniques. Hall measurements show that the beta-FeSi2 la yers obtained are p type. Mobilities observed are 1-4 cm2/V s at room temperature and approximately 25 cm2/V s at liquid-nitrogen temperatur e. These results show that the electrical properties of ion-beam-synth esized beta-FeSi2 is comparable with those of surface-grown material. The results confirm that optoelectronic applications of beta-FeSi2 are limited.