EPITAXIAL-GROWTH AND MAGNETIC-PROPERTIES OF FE(211)

Epitaxial growth of Fe(211) was achieved at a room temperature on MgO( 110) with a dc facing targets sputtering system. The epitaxial relatio n was confirmed by electron diffraction: [111] in the Fe(211) plane is parallel to [110] in the MgO(110) plane with a 6:5 coincident site la ttice. Crystallographic and magnetic properties could be controlled by changing the rf power of substrate bias and substrate temperature. Th e magnetocrystalline anisotropy energy for Fe(211) was calculated and compared with experimental results. The film deposited at 400-degrees- C with 10 W of rf bias had a small stress and showed almost theoretica l behavior in a torque measurement. The difference in the in-plane ani sotropy energy between the film and bulk was attributed to the effect of uniaxial anisotropy energy.