M. Horita et al., IMPURITY DOPING IN INP LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLPHOSPHINE AND ORGANIC DOPING SOURCES, Journal of applied physics, 74(7), 1993, pp. 4737-4740
Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy
using tertiarybutylphosphine and organic doping sources is presented.
Diethylzinc and diethylselenide were used as the p-type and n-type do
ping sources, respectively. Electrical properties and surface morpholo
gy of the impurity-doped layers together with their growth condition d
ependence were investigated. Good controllability and reproducibility
of the doping level were confirmed. The maximum doping levels of 1.8 X
10(18) and 1 X 10(19) cm-3 were successfully attained for p-InP and n
-InP, respectively. These results promise further safe metalorganic va
por-phase epitaxy by using organic compounds for all precursors.