IMPURITY DOPING IN INP LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLPHOSPHINE AND ORGANIC DOPING SOURCES

Impurity doping in InP layer grown by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and organic doping sources is presented. Diethylzinc and diethylselenide were used as the p-type and n-type do ping sources, respectively. Electrical properties and surface morpholo gy of the impurity-doped layers together with their growth condition d ependence were investigated. Good controllability and reproducibility of the doping level were confirmed. The maximum doping levels of 1.8 X 10(18) and 1 X 10(19) cm-3 were successfully attained for p-InP and n -InP, respectively. These results promise further safe metalorganic va por-phase epitaxy by using organic compounds for all precursors.