QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE BY DEPOSITION OF METAL ADSORBATES

Various metals were deposited on luminescent porous silicon (PS) by im mersion in metal ion solutions and by evaporation. The photoluminescen ce (PL) was quenched upon immersion in ionic solutions of Cu, Ag, and Au but not noticeably quenched in other ionic solutions. Evaporation o f 100 angstrom of Cu or 110 angstrom of Au was not observed to quench PL. Auger electron spectroscopy performed on samples quenched and then immediately removed from solution showed a metallic concentration in the PS layer of order 10 at.%, but persisting to a depth of order 3000 angstrom.