POTENTIAL NEAR THE INTERFACE OF GAAS (AL,GA)AS IN THE JELLIUM,THOMAS MODEL/

Thomas-Fermi model is applied to study the heterostructure GaAs/(Al,Ga )As p-N junction. We consider that the electron and hole densities are embeded in the heterojellium of constant charge background and solve the Poission equations of electron and hole separately on the p-side a nd on the N-side. We derive and calculate some semiconductor's propert ies, such as space charge layer width, depletion layer width, electron and hole density distributions, potentials. We find that our results confirm all the concepts we have currently, especially from the electr omagnetism point of view. There are also a ''quantum well'' to be used for (quantum) dynamical calculations. At the interface, we have also find the spike. But the magnitudes of the layer widths are different f rom those of the current concepts.