SEMICONDUCTOR PHOTOELECTROCHEMICAL PHOTOGRAPHIC DEVICE BASED ON CADMIUM SELENIDE

A semiconductor photoelectrochemical photographic device (SPEPD) havin g as high as 10(7)-10(8) cm2/J sensitivity was developed using vacuum evaporated thin films of CdSe on SnO2-glass substrates as photoelectro des and polyacrylamide gel films containing electrochromic components as an image recording layer. Photographic characteristics of SPEPD wer e investigated under both cathodic and anodic polarization of the phot oelectrode with different electrochromic and model recording layers. T he effect of photoelectrochemical corrosion of the photoelectrode on s uch characteristics was estimated and a method of electrode protection was suggested.