STATIC CHARACTERISTIC AND TRANSIENT-BEHAVIOR OF A N-X RAY(PNN+ TRANSISTOR IRRADIATED WITH FLASH)

This work concerns a parasitic N+PNN+ transistor appearing in a power MOSFET. 2D Medici simulations point out a close correlation between th e static characteristic and the transient values of both the current a nd the reverse bias of the transistor irradiated by a flash-X ray. The static characteristic points out a steady-state where the transistor behaves as a resistor. If the dose rate is sufficient, it can bring th e transistor to the same steady-state. In both cases, this steady-stat e is reached after the same physical process: conduction of the emitte r-base junction, shift of the electric field towards the NN+ junction and highly avalanching conditions in the device.