Is. Dutsyak et al., STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF A-GESE THIN-FILMS ATGAMMA(CO-60)-QUANTA IRRADIATION, Radiation effects and defects in solids, 139(4), 1996, pp. 253-260
The influence of gamma(Co-60)-radiation at 10(2)-10(6) Gy doses on the
structure, dark electroconductivity and optical properties of amorpho
us GeSe thin films obtained by the method of flash evaporation on the
substrates at T-s = 293 K is being investigated. The results of the st
udy show, that the observed effects are determined by the interconnect
ed process of the local changes in the intermediate range order of the
films and the radiation-induced defects formation.