Dj. Kester et R. Messier, MICRO-EFFECTS OF RESPUTTERING DUE TO NEGATIVE-ION BOMBARDMENT OF GROWING THIN-FILMS, Journal of materials research, 8(8), 1993, pp. 1938-1957
Negative ion bombardment of an evolving thin film can cause changes in
the film's surface due to resputtering of the already deposited mater
ial. Through the study of rf-sputtered perovskite (BaTiO3) thin films,
we have found that surface micro-effects, i.e., changes in the surfac
e morphology of the films at the mum-scale level, are dependent on the
deposition conditions. Ripples, cones, ridges, and etch pits of vario
us shapes and sizes were all observed on growing films. A transformati
on of the morphology of the top surface of the film as a function of b
oth deposition time and location on the substrate has been observed. T
he type of surface morphology found at any point was found to be depen
dent on a number of factors, including deposition rates, flux and ener
gy of bombarding ions, and the average angle of incidence of the bomba
rding ions. We have developed a qualitative model for the formation of
these surface features, based on the resputtering yield as a function
of the average angle of incidence of the bombarding ions. The model s
uggests that surface nonuniformities, often ripples, initiate the deve
lopment of etch pits. Other mechanisms of the surface morphology devel
opment (such as clustering) are used to explain the formation of surfa
ce features other than etch pits.