AN AB-INITIO MOLECULAR-ORBITAL STUDY OF THE GAH4 POTENTIAL-ENERGY SURFACE

Citation
Ys. Cheung et al., AN AB-INITIO MOLECULAR-ORBITAL STUDY OF THE GAH4 POTENTIAL-ENERGY SURFACE, Journal of molecular structure. Theochem, 102, 1993, pp. 169-175
Citations number
26
Categorie Soggetti
Chemistry Physical
ISSN journal
01661280
Volume
102
Year of publication
1993
Pages
169 - 175
Database
ISI
SICI code
0166-1280(1993)102:<169:AAMSOT>2.0.ZU;2-0
Abstract
The potential energy surface for the GaH4 radical was investigated usi ng ab initio MO theory. Three minima corresponding to equilibrium stru ctures with D2d, C3v and C(s) symmetry were found. The D2d and C3v str uctures are 144 and 95 kJ mol-1 above the C(s) structure, respectively . From both structural and energetic points of view, the C(s) structur e is likely to be a weak van der Waals molecular complex between GaH2 and H-2, which may easily dissociate into these two fragments.