SCANNING-TUNNELING-MICROSCOPY OF THE INTERACTION OF HYDROGEN WITH SILICON SURFACES

Authors
Citation
Jj. Boland, SCANNING-TUNNELING-MICROSCOPY OF THE INTERACTION OF HYDROGEN WITH SILICON SURFACES, Advances in Physics, 42(2), 1993, pp. 129-171
Citations number
121
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00018732
Volume
42
Issue
2
Year of publication
1993
Pages
129 - 171
Database
ISI
SICI code
0001-8732(1993)42:2<129:SOTIOH>2.0.ZU;2-H
Abstract
This article focuses on recent scanning tunnelling microscopy studies that have led to an improved understanding of the interaction of hydro gen with silicon surfaces. The structure and bonding of the Si(111)-7 x 7 and Si(100)-2 x 1 surfaces are described together with the adsorpt ion and desorption of hydrogen from these surfaces. The role of hydrog en in the passivation of silicon surfaces and silicon chemical vapour deposition are also discussed.