SPATIAL LOCALIZATION OF THE BURIED ION-BEAM SYNTHESIZED LAYER OF SILICON DIOXIDE INCLUSIONS IN SILICON

Authors
DANILIN AB MALININ AA MORDKOVICH VN SARAIKIN VV VYLETALINA OI
Citation
Ab. Danilin et al., SPATIAL LOCALIZATION OF THE BURIED ION-BEAM SYNTHESIZED LAYER OF SILICON DIOXIDE INCLUSIONS IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 82(3), 1993, pp. 431-434
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
82
Issue
3
Year of publication
1993
Pages
431 - 434
Database
ISI
SICI code
0168-583X(1993)82:3<431:SLOTBI>2.0.ZU;2-I
Abstract
The effects of implantation of O+ ions with an energy of 150 keV and d ose of 1.2 x 10(17) cm-2 into (100) n-type silicon at different wafer temperatures have been investigated. After the implantation, the sampl es were annealed in an Ar flow furnace at 1200-degrees-C for 2 h. The composition and microstructure were determined using SIMS and XTEM met hods. It is found that the spatial localization of SiO2 inclusions in the buried layer can be narrowed by increasing the implantation temper ature. However, the best spatial localization of the synthesised oxide precipitates occurs when the implantation temperature is sufficiently low that an amorphous buried layer is formed. An explanation for this phenomenon is discussed.