ELECTRONIC-STRUCTURE OF ERBIUM SILICIDE ULTRA-THIN FILMS

The electronic structure of erbium silicide ultra-thin films epitaxial ly grown on Si(111) has been studied by means of angle-resolved ultra- violet photoemission spectroscopy (ARUPS) in the coverage range 0.2-4 monolayers (ML). Some peaks probably related to the silicide surface a tomic structure are observed at any coverage. Features that appear at normal emission in connection with an R3 superstructure are ascribed t o vacancy-induced states in the silicon surface plane. No true interfa ce states could be identified in this study.