METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF ALUMINUM-COPPER ALLOY-FILMS

Authors
KATAGIRI T KONDOH E TAKEYASU N NAKANO T YAMAMOTO H OHTA T
Citation
T. Katagiri et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF ALUMINUM-COPPER ALLOY-FILMS, JPN J A P 2, 32(8A), 1993, pp. 120001078-120001080
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
32
Issue
8A
Year of publication
1993
Pages
120001078 - 120001080
Database
ISI
SICI code
Abstract
Al-(0.7-1.4 wt%) Cu alloy films for LS I interconnects were formed, fo r the first time, by a metalorganic chemical vapor deposition method, using dimethylaluminumhydride ((CH3)2AlH) and cyclopentadienylcoppertr iethylphosphine ((C5H5)CuP(C2H5)3) as precursors. The depth profile of Auger electron spectroscopy showed that the deposited films had a uni form Cu distribution. The transmission electron microscopy (TEM) and e lectron diffraction analyses confirmed the presence of CuAl2 precipita tes in the films.