LOW-ENERGY OXYGEN-ION BOMBARDMENT EFFECT ON BATIO3 THIN-FILMS GROWN BY MULTI-ION-BEAM REACTIVE SPUTTERING TECHNIQUE

Low-energy oxygen ion bombardment was employed to modify the physical properties of BaTiO3 thin films grown by the multi-ion-beam reactive s puttering technique. The bombardment effect was shown in terms of film morphology, dielectric properties, dc resistivity degradation, and cu rrent-voltage characteristics. The results showed that oxygen ion bomb ardment can lead to denser morphology, a higher dielectric constant, a lower dissipation factor, slower dc resistivity degradation rate, and lower leakage current. The possible reasons for these improvements in clude the changes in void network structure, grain boundary structure, and defect structure of the films.