DETERMINATION OF THE DENSITY-OF-STATES AT THE FERMI-LEVEL OF HYDROGENATED AMORPHOUS-SILICON IN THIN-FILM-TRANSISTOR STRUCTURE BY SPACE-CHARGE LIMITED CURRENT MEASUREMENT
Hs. Soh et al., DETERMINATION OF THE DENSITY-OF-STATES AT THE FERMI-LEVEL OF HYDROGENATED AMORPHOUS-SILICON IN THIN-FILM-TRANSISTOR STRUCTURE BY SPACE-CHARGE LIMITED CURRENT MEASUREMENT, Applied physics letters, 63(6), 1993, pp. 779-781
We studied the space charge limited current effect in hydrogenated amo
rphous silicon (a-Si:H) thin-film transistors (TFTs). We demonstrate t
hat the drain current is space charge limited when the source-drain vo
ltage is large and the gate voltage is small. Using this space charge
limited current we determined the density of states in the gap of a-Si
:H in a-Si:H TFT.