PLANAR DOUBLE GATE QUANTUM-WIRE TRANSISTOR

A planar double gate quantum wire transistor (QWT) is proposed and dem onstrated. The transistor uses a narrow wire gate placed inside the ga p of a split gate to create a single one-dimensional (1D) quantum wire (QW). We demonstrate theoretically and experimentally that the wire g ate can create a QW potential with a better confinement and therefore larger subband separations than that in other split-gate QWTs, and tha t the split gate can adjust the number of electrons inside the QW whil e keeping the ID QW potential almost unchanged. Furthermore, we found that, in the double gate QWT, a ID electron channel can spatially over lap with a 2D electron channel without significant mixing.