SEQUENTIAL-ION-IMPLANTATION SYNTHESIS OF TERNARY METAL SILICIDES

Citation
Zq. Tan et al., SEQUENTIAL-ION-IMPLANTATION SYNTHESIS OF TERNARY METAL SILICIDES, Applied physics letters, 63(6), 1993, pp. 791-793
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
6
Year of publication
1993
Pages
791 - 793
Database
ISI
SICI code
0003-6951(1993)63:6<791:SSOTMS>2.0.ZU;2-K
Abstract
By implanting two different metals in sequence into Si(100), we find t hat new ternary silicides can by synthesized with simple binary silici de structures. The synthesis of CoSi2-type (Co,Fe)Si2, and CoSi-type ( Co,Fe)Si and (Fe,Ni)Si is demonstrated. The structure is largely deter mined by the first implanted metal and the total dose of the two metal s, allowing one to design the structure of the ternary silicide. The t wo implanted species occupy equivalent positions in the same structure and the metal composition may be continuously varied in a given struc ture. This opens new possibilities for the synthesis of ternary and mu ltinary compounds and alloys.