1.3 MU-M ELECTROABSORPTION REFLECTION MODULATORS ON GAAS

We demonstrate a reflection electroabsorption modulator grown on a GaA s substrate operating near 1.3 mum, the dispersion minimum for silica fibers. The device was grown by molecular beam epitaxy and uses a nove l technique of integrating the bottom quarter-wave mirror into a buffe r with linearly graded In composition. The active area consisted of th irty InGaAs quantum wells with GaAs barriers. The mirror was formed by layers of InGaAs and InAlAs where the In concentration was graded fro m 0% to 35%. A maximum relative change in reflectivity, DELTAR/R, of 7 3% at 1.33 mum was achieved. Experimental results agree with simulatio ns performed using the transfer matrix technique.