OPTIMIZATION OF THE GROWTH-PARAMETERS FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED IN0.16GA0.84AS AL0.33GA0.67AS SINGLE-QUANTUM-WELLSTRUCTURES/

Authors
EMENY MT SKOLNICK MS WHITEHOUSE CR HAYES DG CALCOTT PDJ HIGGS AW
Citation
Mt. Emeny et al., OPTIMIZATION OF THE GROWTH-PARAMETERS FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED IN0.16GA0.84AS AL0.33GA0.67AS SINGLE-QUANTUM-WELLSTRUCTURES/, Applied physics letters, 63(6), 1993, pp. 824-826
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
6
Year of publication
1993
Pages
824 - 826
Database
ISI
SICI code
0003-6951(1993)63:6<824:OOTGFT>2.0.ZU;2-H
Abstract
A systematic study of the optical properties of strained InxGa1-xAs/Al yGa1-yAs (x=0.16, y=0.33) single quantum-well structures grown by mole cular-beam epitaxy is presented. An optimized growth procedure is show n to produce quantum-well structures exhibiting 2 K photoluminescence linewidths as low as 2.6 meV, very close to those observed for corresp onding InxGa1-xAs/GaAs control structures.