NI-SILICIDE FORMATION - DEPENDENCE ON CRYSTALLOGRAPHIC ORIENTATION OFSI SUBSTRATES

We have analyzed the influence of the crystalline orientation of Si su bstrates on Ni-silicide formation. Ni-silicide /Si(111) and (100) samp les formed through solid-phase reaction (S PR) were examined using sof t X-ray emission spectroscopy (SXES), transmission electron microscopy (TEM) and grazing incidence X-ray diffraction. The formation of delta -Ni2Si and NiSi on Si(100) substrate occurs at a lower temperature tha n that on Si(111). However, the NiSi2 region is found to be formed onl y on the Si(111) substrate at a lower temperature (T(a) = 500-degrees- C) than previously reported. The NiSi2 regions are located at the inte rface region of NiSi/Si(111) and have a small island structure. On Si( 100) substrates, only the NiSi layer is stably formed in the heat-trea tment temperature range of 250-700-degrees-C.