CURRENT-VOLTAGE CHARACTERISTICS OF YBA2CU3O7-X THIN-FILMS GROWN IN-SITU BY PULSED-LASER DEPOSITION

Citation
Yk. Kim et al., CURRENT-VOLTAGE CHARACTERISTICS OF YBA2CU3O7-X THIN-FILMS GROWN IN-SITU BY PULSED-LASER DEPOSITION, Journal of the Korean Physical Society, 26(5), 1993, pp. 529-535
Citations number
30
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
26
Issue
5
Year of publication
1993
Pages
529 - 535
Database
ISI
SICI code
0374-4884(1993)26:5<529:CCOYTG>2.0.ZU;2-P
Abstract
High T(c) superconductor YBa2Cu3O7-x thin films have been deposited on SrTiO3(100) and SrTiO3(110) substrates using the pulsed laser deposit ion technique. X-ray diffraction and pole figure studies reveal that t he film deposited on SrTiO3(100) is CoMposed of grains whose c-axes ar e normal to the substrate so that they form small angle grain boundari es. Most YBa2Cu3O7-x grains grown in the film on SrTiO3(110) have eith er the (103) or (103 underbar) orientation normal to the substrate, so they form large angle grain boundaries. The different microstructure makes the critical current density of the film on SrTiO3(100) larger t han that of the film on SrTiO3(110) by two orders of magnitude. I-V ch aracteristic curves of these films are measured at various temperature s near the critical temperature without an applied magnetic field. The I-V curves for both films follow the scaling behavior of the vortex g lass model with critical exponents of z approximately 4.8 and v approx imately 1.1.