Two approaches that control the overflow of silylated material that ca
n occur subsequent to surface imaging of acid-hardened resists are int
roduced. Treatment of the resist surface with a cross-linking agent [b
is(dimethylamino)dimethylsilane] prior to silylation can produce a sur
face layer with the physical integrity to constrain silylated material
. Alternatively, the unexposed areas of the resist may be partially re
moved by development with a basic solution. The surface depressions th
us produced allow volume expansion to occur during silylation without
causing overflow.