Laser analytical methods are used for the determination of surface sod
ium impurity distribution on silicon samples. In the first experiments
, the spots on the surface of the sample were atomized by ruby laser p
ulses and the sodium atoms were selectively ionized by resonant ioniza
tion, thus the simple ion detection yielded the sodium surface contami
nation density. The second method applies excimer laser ablation, and
the generated ions are analyzed and detected by a reflectron-type time
-of-flight mass spectrometer. The analytical arrangements are applied
for tokamak plasma investigations. Silicon plates as deposition probes
located in the edge plasma region are exposed to several tokamak disc
harges, which are contaminated by pulsed sodium impurity injections. S
urface analysis of the samples enables determining the sodium impurity
fluxes in the tokamak edge plasma region, which are characteristic of
particle transport properties. The high sensitivity of the method app
lying resonance ionization enables the analysis of single discharges,
whereas the application of mass spectrometry offers the possibility of
detecting several impurity materials.