BARRIER CAPACITANCE OF MILLIMETER PLANAR DIODES AND THEIR C V CHARACTERISTICS/

Authors
DRYAGIN YA KOPOSOVA EV MAZUR AB TABAKAEVA TN
Citation
Ya. Dryagin et al., BARRIER CAPACITANCE OF MILLIMETER PLANAR DIODES AND THEIR C V CHARACTERISTICS/, Instruments and experimental techniques, 36(3), 1993, pp. 412-415
Citations number
9
Categorie Soggetti
Instument & Instrumentation",Engineering
Journal title
Instruments and experimental techniques → ACNP
ISSN journal
00204412
Volume
36
Issue
3
Year of publication
1993
Part
1
Pages
412 - 415
Database
ISI
SICI code
0020-4412(1993)36:3<412:BCOMPD>2.0.ZU;2-R
Abstract
A technique for measuring small capacitances at high frequencies is de scribed. A test capacitor is connected to the output of a complex-gain meter. The meter registers the phase variation in the reflection coef ficient, which is sufficient even when a small lumped capacitor is con nected to the output of the meter's coaxial line. At 3.8 GHz the fluct uation threshold associated with the noise factor of the device was fo und to be 5.10(-17)F and the dynamic range of the capacitance measurem ent was approximately 0.25 pF.