A SHEET RESISTANCE STANDARD FOR ION IMPLANT

Citation
La. Larson et al., A SHEET RESISTANCE STANDARD FOR ION IMPLANT, Solid state technology, 36(10), 1993, pp. 67
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
0038111X
Volume
36
Issue
10
Year of publication
1993
Database
ISI
SICI code
0038-111X(1993)36:10<67:ASRSFI>2.0.ZU;2-5
Abstract
Methods are proposed for preparing a standard reference material (SRM) for ion implantation. This would provide a reliable means for certify ing and calibrating equipment and measurement tools. The SRM would be a wafer implanted with a specified species, energy, and dose, and its average sheet resistance and uniformity would be specified within cert ain tolerances. The proposed standard represents the work of a number of collaborating organizations, which reviewed existing studies and al so considered input from implant vendors and service organizations. Fa brication specifications are proposed along with plots indicating sens itivity of key results to various critical parameters of that process.