COATING THICKNESS FALL-OFF WITH SOURCE TO SUBSTRATE DISTANCE IN PVD PROCESSES

Citation
Ks. Fancey et A. Matthews, COATING THICKNESS FALL-OFF WITH SOURCE TO SUBSTRATE DISTANCE IN PVD PROCESSES, Surface & coatings technology, 59(1-3), 1993, pp. 113-116
Citations number
9
Categorie Soggetti
Material Science
ISSN journal
02578972
Volume
59
Issue
1-3
Year of publication
1993
Pages
113 - 116
Database
ISI
SICI code
0257-8972(1993)59:1-3<113:CTFWST>2.0.ZU;2-I
Abstract
The way in which coating thickness varies as a function of source to s ubstrate distance in physical vapour deposition (PVD) is obviously an important factor when designing or optimising PVD plant. Studies made with electron beam evaporation-based PVD systems are reported, where c oatings can be deposited in the presence of a low pressure inert gas ( i.e. gas evaporation) or with plasma assistance (ion plating). We demo nstrate that the coating thickness on substrate surfaces positioned di rectly above and facing the vapour source follows an inverse power fun ction of source to substrate distance; the work expands on preliminary findings previously reported. The influence of inert gas pressure, su bstrate biasing, evaporation rate, evaporant material and condition of the source are discussed, with reference to vapour emission-transport ation phenomena and ionisation conditions.