RFE2 (R = RARE-EARTH) THIN-FILM FORMATION BY AN ION-BEAM SPUTTERING SYSTEM WITH A PLASMA FILAMENT TYPE ION-SOURCE

Citation
Y. Matsumura et al., RFE2 (R = RARE-EARTH) THIN-FILM FORMATION BY AN ION-BEAM SPUTTERING SYSTEM WITH A PLASMA FILAMENT TYPE ION-SOURCE, Surface & coatings technology, 59(1-3), 1993, pp. 156-159
Citations number
13
Categorie Soggetti
Material Science
ISSN journal
02578972
Volume
59
Issue
1-3
Year of publication
1993
Pages
156 - 159
Database
ISI
SICI code
0257-8972(1993)59:1-3<156:R(=RTF>2.0.ZU;2-1
Abstract
Thin films of giant magnetostrictive RFe2 (R = rare earth) intermetall ic compounds were prepared using three different processes: ion beam s puttering with a plasma filament ion source (IBS-PF), vacuum flash eva poration (FE) and ion plating (IP). The films were examined with respe ct to the structure, composition and contaminations in the different p rocesses. All processes yielded amorphous-like films. The films formed by IBS-PF and FE processes showed compositions similar to those of al loy targets and powders respectively, while a large deviation in the c omposition was found for the IP process. Auger electron spectroscopy s tudies on the films indicated that the IBS-PF process yields the clean est films. In the FE process, the control of the ratio of vacuum to de position rate is crucial for the formation of the film.