MODIFICATION OF NEAR-SURFACE REGIONS IN SI BY LOW-ENERGY PARTICLES

During ion- and electron-beam-assisted deposition processes radiation defects are generated in near-surface regions with a long tail of defe cts with lower concentrations into the bulk. Using current voltage mea surements and capacitance spectroscopy the influence of different char ged particles on the material modification at low defect levels is inv estigated. In comparison with low energy ion implantation data it is d emonstrated that the long tails of defects can be explained by channel ling effects of a very small fraction of the deposited atoms in the fi rst stage of the evaporation process. Consequently, the generation of observed tails in low energy processes by various authors can be under stood.